SK Hynix Eyes TSMC 3nm for HBM4E Logic Die — Samsung 4nm Showdown (2026)
HBM4E is the next evolution of High Bandwidth Memory (HBM), designed to push data throughput and power efficiency beyond the current HBM4 standard. SK Hynix is now reportedly evaluating TSMC's 3nm (N3P) process for the HBM4E logic die — the computational chip at the base of every HBM stack. This represents a direct challenge to Samsung, which manufactures its HBM4 logic dies using its own 4nm foundry process.
Why Does the HBM Logic Die Process Matter?
HBM works by stacking multiple DRAM layers vertically and connecting them through tiny wires called TSVs (Through-Silicon Vias). At the bottom of this stack sits the logic die — essentially the "brain" that routes data between the DRAM layers and the processor. The more advanced the logic die's manufacturing process, the lower its power consumption and the faster its data processing. SK Hynix currently uses TSMC's 12nm process for HBM4 logic dies, but is considering a leap to 3nm (N3P) for HBM4E — skipping four process generations in a single step.
What Changes with TSMC 3nm?
The most significant improvement is the operating voltage reduction from 0.8V to 0.75V. Lower voltage translates directly to reduced power consumption — critical for data centers where electricity costs are a major expense. TSMC's N3P node is already proven in mobile and high-performance computing chips, making it a reliable choice for HBM4E logic dies. These chips are expected to power NVIDIA's next-generation Vera Rubin Ultra AI accelerator.
Samsung 4nm vs. TSMC 3nm: The Foundry Choice War
Samsung produces HBM4 logic dies using its in-house 4nm foundry process and plans to adopt 2nm for HBM5. SK Hynix, lacking its own foundry, outsources to TSMC. This divergence is now a strategic variable in HBM competition. Industry analysts expect the HBM4E generation to kick off the "custom HBM" era, where logic dies are tailored to each client's (NVIDIA, AMD, etc.) specific chip requirements.
Key Takeaways
① TSMC 3nm Under Review — SK Hynix is evaluating N3P for HBM4E logic dies, cutting voltage to 0.75V for maximum efficiency
② Foundry War Intensifies — Samsung's in-house 4nm vs. TSMC 3nm creates a direct competition where foundry choice defines HBM competitiveness
③ Custom HBM Era Begins — Starting with HBM4E, client-specific logic die designs become standard, blurring the line between memory and logic
The HBM4E foundry battle signals that semiconductor competition has evolved beyond memory technology into a comprehensive system-level contest spanning design, manufacturing, and advanced packaging.
👉 Samsung HBM4E World-First at GTC 2026 — Jensen Huang's "World's Best" Endorsement and 4.0 TB/s Specs — read this next.
📌 Sources: TrendForce, Tom's Hardware (2026)
댓글
댓글 쓰기